IRF7422D2 8/21/98 description so-8 notes: ? repetitive rating C pulse width limited by max. junction temperature (see fig. 11) ? i sd -2.2a, di/dt -50a/s, v dd v (br)dss , t j 150c ? pulse width 300s C duty cycle 2% ? surface mounted on fr-4 board, t 10sec. 8 1 2 3 4 5 6 7 d d d d g s a a a top view a v dss = -20v r ds(on) = 0.09 w schottky vf = 0.52v fetky mosfet & schottky diode tm the fetky tm family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. preliminary absolute maximum ratings pd- 91412j www.irf.com 1 parameter maximum units r q ja junction-to-ambient ? 62.5 c/w thermal resistance ratings parameter maximum units i d @ t a = 25c -4.3 i d @ t a = 70c -3.4 i dm pulsed drain current -33 p d @t a = 25c 2.0 p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c l co-packaged hexfet power mosfet and schottky diode l ideal for buck regulator applications l p-channel hexfet l low v f schottky rectifier l generation 5 technology l so-8 footprint continuous drain current, v gs @ -4.5v power dissipation a w
IRF7422D2 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a CCC 0.07 0.09 v gs = -4.5v, i d = -2.2a ? CCC 0.115 0.14 v gs = -2.7v, i d = -1.8a ? v gs(th) gate threshold voltage -0.70 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 4.0 CCC CCC s v ds = -16v, i d = -2.2a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 15 22 i d = -2.2a q gs gate-to-source charge CCC 2.2 3.3 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 6.0 9.0 v gs = -4.5v, see fig. 6 and 9 ? t d(on) turn-on delay time CCC 8.4 CCC v dd = -10v t r rise time CCC 26 CCC i d = -2.2a t d(off) turn-off delay time CCC 51 CCC r g = 6.0 w t f fall time CCC 33 CCC r d = 4.5 w , see fig. 10 ? c iss input capacitance CCC 610 CCC v gs = 0v c oss output capacitance CCC 310 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 170 CCC ? = 1.0mhz, see fig. 5 mosfet electrical characteristics @ t j = 25c (unless otherwise specified) i dss drain-to-source leakage current i gss w a na ns r ds(on) static drain-to-source on-resistance parameter min. typ. max. units conditions i s continuous source current (body diode) CCC CCC -2.5 i sm pulsed source current (body diode) CCC CCC -17 v sd body diode forward voltage CCC CCC -1.0 v t j = 25c, i s = -1.8a, v gs = 0v t rr reverse recovery time (body diode) CCC 56 84 ns t j = 25c, i f = -2.2a q rr reverse recoverycharge CCC 71 110 nc di/dt = -100a/s ? a mosfet source-drain ratings and characteristics parameter max. units conditions if (av) max. average forward current 2.8 50% duty cycle. rectangular wave, tc = 25c 1.8 50% duty cycle. rectangular wave, tc = 70c i sm max. peak one cycle non-repetitive 200 5s sine or 3s rect. pulse following any rated surge current 20 10ms sine or 6ms rect. pulse load condition & with vrrm applied a schottky diode maximum ratings a parameter max. units conditions vfm max. forward voltage drop 0.57 if = 3.0, tj = 25c 0.77 if = 6.0, tj = 25c 0.52 if = 3.0, tj = 125c 0.79 if = 6.0, tj = 125c . irm max. reverse leakage current 0.13 vr = 20v tj = 25c 18 tj = 125c ct max. junction capacitance 310 pf vr = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 4900 v/s rated vr schottky diode electrical specifications v ma ( hexfet is the reg. tm for international rectifier power mosfet's )
IRF7422D2 www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics power mosfet characteristics 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse w idth t = 25c a -i , drain-to-s ource current (a ) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n r es istance ds(on) (normalized) a i = -3 .6 a d v = -4.5v gs
IRF7422D2 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage power mosfet characteristics 0 500 1000 1500 1 10 100 c, capacitance (pf) a ds -v , drain-to-s ource volta g e ( v ) v = 0v , f = 1m hz c = c + c , c s hor te d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 g gs a for test circuit see figure 12 -v , gate-to-source voltage (v) q , total g ate char g e ( nc ) i = -2.2a v = -16v d ds 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 1 10 100 1 10 100 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRF7422D2 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics r ds (on) , drain-to-source on resistance ( w ) r ds (on) , drain-to-source on resistance ( w ) 0.0 0.1 0.2 0.3 0.4 02468 a i , drain c urrent (a ) d v = -5.0v gs v = -2.5v gs 0.04 0.06 0.08 0.10 0.12 0.14 23 45 67 a gs v , gate-to-source voltage (v) i = -4.3a d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) fig 10. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage
IRF7422D2 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage fig.14 - typical junction capacitance vs. reverse voltage reverse current - i r (ma) fig. 12 - typical forward voltage drop characteristics 0.001 0.01 0.1 1 10 100 0 4 8 12 16 20 r 100c 75c 50c 25c reverse volta g e - v (v) 125c a t = 150c j 100 1000 0 5 10 15 20 t = 25c j reverse volta g e - v ( v ) r t junction capacitance - c (pf) a 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
IRF7422D2 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 q part marking
IRF7422D2 8 www.irf.com 330.00 (12.992) m ax . 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline confo rms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 221 8371 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice.8/98
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